4 J ul 1 99 9 Quantum dot dephasing by edge states
نویسنده
چکیده
We calculate the dephasing rate of an electron state in a pinched quantum dot, due to Coulomb interactions between the electron in the dot and electrons in a nearby voltage biased ballistic nanostructure. The dephasing is caused by nonequilibrium time fluctuations of the electron density in the nanostructure, which create random electric fields in the dot. As a result, the electron level in the dot fluctuates in time, and the coherent part of the resonant transmission through the dot is suppressed.
منابع مشابه
3 J ul 2 01 5 Two - dimensional topological insulator edge state backscattering by dephasing
To understand the seemingly absent temperature dependence in the conductance of twodimensional topological insulator edge states, we perform a numerical study which identifies the quantitative influence of the combined effect of dephasing and elastic scattering in charge puddles close to the edges. We show that this mechanism may be responsible for the experimental signatures in HgTe/CdTe quant...
متن کامل/ 99 07 00 8 v 1 2 J ul 1 99 9 1 / 4 - BPS states on noncommutative tori
We give an explicit expression for classical 1/4-BPS fields in supersymmetric Yang-Mills theory on noncommutative tori. We use it to study quantum 1/4-BPS states. In particular we calculate the degeneracy of 1/4-BPS energy levels.
متن کاملEnergy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
متن کاملDephasing of excitons and multiexcitons in undoped and p-doped InAs/GaAs quantum dots-in-a-well
We report an experimental investigation of the dephasing of excitons and multiexcitons in technologically relevant undoped and p-doped InAs/GaAs dot-in-a-well structures emitting near 1.3 m wavelength. Using a transient four-wave mixing technique in heterodyne detection, we measured the excitonic dephasing due to phonon coupling in the temperature range from 5 to 300 K, and the multiexcitonic d...
متن کاملProbing BEC phase fluctuations with atomic quantum dots
We consider the dephasing of two internal states |0〉 and |1〉 of a trapped impurity atom, a so-called atomic quantum dot (AQD), where only state |1〉 couples to a Bose-Einstein condensate (BEC). A direct relation between the dephasing of the internal states of the AQD and the temporal phase fluctuations of the BEC is established. Based on this relation we suggest a scheme to probe BEC phase fluct...
متن کامل